型 号：VistecEBPG5000+   功 能： 各种光学光刻模板的制备 Fabrication of versatilephotomasks  各种碎片、50 mm及100 mm基片微纳米图案的直写，最小线宽<10 nm Direct write of micro- andnanopatterns on 50 mm, 100 mm and pieces wafers with minimum line width smaller than 10 nm 主要指标： 图形发生器频率(Pattern generator frequency)：25 MHz  束斑位置稳定性(Beam position stability)：< 50 nm/h 束流稳定性(Current stability)：<±0.5%/h 主场稳定性(Main field stability)：< 40 nm (for 400μmmain fieldwithin0.5 h) 场畸变(In field distortion)：<±15 nm(for400μmmain field) 分辨率(Resolution)：< 8 nmline width(@100kV) <±3 nm(for <10nm lines with in 100μmfields@100kV)  <±3 nm(for <15nm lines with in 250μm fields@100kV) 场拼接精度(Stitching accuracy)：　±15nm(for 100μmmain field@100kV) ±20nm (for 250μmmain field@100kV)  ±25nm (for 400μmmain field@100kV) 套刻精度(Overlay accuracy)：　　　±15nm(for 100μmmain field@100kV)  ±20nm (for 250μmmain field@100kV)  ±25nm (for 400μmmain field@100kV) 直写精度(Direct write accuracy)：　±15nm(for 100μmmain field@100kV)  ±20nm (for 250μmmain field@100kV) ±25nm (for 400μmmain field@100kV)   技术特点： 高曝光速度和稳定性，可大面积曝光 Large areas to be patterned with highspeed and good stability 高分辨率 High resolution